HT Semiconductor 2sd1757k free download

File name 2sd1757k.pdf

2SD1757K TRANSISTOR (NPN) SOT-23 FEATURES Optimal for muting. 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 15 V Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 6.5 V Collector cut-off current ICBO VCB=20V,IE=0 0.5 A Emitter cut-off current IEBO VEB=4V,IC=0 0.5 A DC current gain hFE VCE=3V,IC=100mA 120 560 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB=50mA 0.4 V Transition frequency fT VCE=5V, IC= 50mA ,f=100MHz 150 MHz Collector Output Capacitance Cob VCB=10V,IE=0,f=1MHZ 15 pF CLASSIFICATION OF hFE Rank Q R S Range 120-270 180-390 270-560 MARKING AAQ AAR AAS 1 JinYu www.htsemi.com semiconductor 2SD1757K 2 JinYu www.htsemi.com semiconductor